Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties
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Date
2024-12
Authors
Olkun, Ali
Kaplan, Hüseyin Kaan
Akay, Sertan Kemal
Sarsıcı, Serhat
Erdoğan, Nursev
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
This study investigates the impact of gamma-irradiation on the material and device properties of Al/n-GaN/p-Si/Al heterojunction diodes. GaN thin films were deposited on glass and p-Si substrates using thermal evaporation, followed by annealing at 450 degrees C. The diodes were subjected to gamma-irradiation doses of 0, 3, and 6 kGy. X-ray diffraction (XRD) measurements revealed significant structural changes, including phase transitions influenced by radiation. Electrical characteristics were assessed through current-voltage (I-V) measurements within the +/- 2 V range. Notably, the ideality factor for the annealed diodes improved from 6.60 to 4.62 and 3.85 with increased gamma-irradiation. The barrier height was determined to be 0.85 eV, and it did not exhibit a significant change upon gamma-irradiation dose. The results provided valuable insights into the response of heterojunction diodes to radiation exposure, aiding in the understanding and potential improvement of the radiation resistance of GaN-based electronic devices.
Description
Science Citation Index Expanded (SCI-EXPANDED)
Keywords
Radiation damage , Thin-films , GaN/Si diodes
Citation
Olkun, A., Kaplan, H. K., Akay, S. K., Sarsıcı, S. & Erdoğan, N. (2024). Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties. Materials Letters, 376, 1-4. https://doi.org/10.1016/j.matlet.2024.137276
