Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties

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dc.authorid0000-0003-1288-0431
dc.contributor.authorOlkun, Ali
dc.contributor.authorKaplan, Hüseyin Kaan
dc.contributor.authorAkay, Sertan Kemal
dc.contributor.authorSarsıcı, Serhat
dc.contributor.authorErdoğan, Nursev
dc.contributor.authorid414025
dc.date.accessioned2025-03-19T11:48:24Z
dc.date.available2025-03-19T11:48:24Z
dc.date.issued2024-12
dc.departmentFakülteler, Meslek Yüksekokulu, Tıbbi Görüntüleme Teknikleri Bölümü
dc.descriptionScience Citation Index Expanded (SCI-EXPANDED)
dc.description.abstractThis study investigates the impact of gamma-irradiation on the material and device properties of Al/n-GaN/p-Si/Al heterojunction diodes. GaN thin films were deposited on glass and p-Si substrates using thermal evaporation, followed by annealing at 450 degrees C. The diodes were subjected to gamma-irradiation doses of 0, 3, and 6 kGy. X-ray diffraction (XRD) measurements revealed significant structural changes, including phase transitions influenced by radiation. Electrical characteristics were assessed through current-voltage (I-V) measurements within the +/- 2 V range. Notably, the ideality factor for the annealed diodes improved from 6.60 to 4.62 and 3.85 with increased gamma-irradiation. The barrier height was determined to be 0.85 eV, and it did not exhibit a significant change upon gamma-irradiation dose. The results provided valuable insights into the response of heterojunction diodes to radiation exposure, aiding in the understanding and potential improvement of the radiation resistance of GaN-based electronic devices.
dc.identifier.citationOlkun, A., Kaplan, H. K., Akay, S. K., Sarsıcı, S. & Erdoğan, N. (2024). Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties. Materials Letters, 376, 1-4. https://doi.org/10.1016/j.matlet.2024.137276
dc.identifier.doi10.1016/j.matlet.2024.137276
dc.identifier.eissn1873-4979
dc.identifier.endpage4
dc.identifier.issn0167-577X
dc.identifier.startpage1
dc.identifier.urihttps://dspace.mudanya.edu.tr/handle/20.500.14362/303
dc.identifier.volume376
dc.identifier.wosWOS:001306019300001
dc.identifier.wosqualityQ2
dc.institutionauthorSarsıcı, Serhat
dc.language.isoen
dc.publisherElsevier
dc.relation.journalMaterials Letters
dc.relation.publicationcategoryMakale- Uluslararası- Hakemli Dergi- Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectRadiation damage
dc.subjectThin-films
dc.subjectGaN/Si diodes
dc.titleFabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties
dc.typeMakale
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